RA60H3847M1 RF high-frequency microwave power, Silicon RF Power MOSFET Amplifier Module,original from Japan

All Mitsubishi Japan products in stock:

RA55H4047M

RA45H4047M

S-AU83L

RA60H4047M

RA60H3847M1

Item Description
Core Function RF power amplification, high-speed switching amplification for TDMA system
Operating Frequency Band 378 ~ 470 MHz (UHF)
Power Supply 12.5V
Output Power 60W
Drain Efficiency ≥40%
Device Type Enhancement-mode MOSFET
Features Fast rise / fall time, compatible with TDMA digital radio; supports linear amplification
Typical Application Professional digital mobile radio, DMR transceiver, ham radio transmitter

المراجعات

لا توجد مراجعات بعد.

كن أول من يقيم “RA60H3847M1 RF high-frequency microwave power, Silicon RF Power MOSFET Amplifier Module,original from Japan”

لن يتم نشر عنوان بريدك الإلكتروني. الحقول الإلزامية مشار إليها بـ *

اطلب عرض أسعار